| PART |
Description |
Maker |
| SBTC-2-25_25L SBTC-2-25 SBTC-2-25L SBTC-2-2525L |
Power Splitter/Combiners 2 Way-050з 1000 to 2500 MHz 1000 MHz - 2500 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50?/a> 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0° 50 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0 50 1000 to 2500 MHz
|
MINI[Mini-Circuits]
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| SF47 SF49 SF48 SF410 |
POWER RECTIFIERS(4.0A,500-1000V)
POWER RECTIFIERS(4.0A500-1000V)
POWER RECTIFIERS(4.0A /500-1000V)
|
MOSPEC[Mospec Semiconductor]
MOSPEC SEMICONDUCTOR CORP.
|
| MAPD-009673-C2DA40 |
5 MHz - 1000 MHz RF/MICROWAVE SPLITTER, 2.2 dB INSERTION LOSS ROHS COMPLIANT, SM-150, 6 PIN
2 Way Power Divider 5 to 1000 MHz
|
M/A-COM Technology Solutions, Inc.
|
| ZFSC-2-2 |
Power Splitter/Combiner 2 Way-0 50楼? 10 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50惟 10 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 10 to 1000 MHz
|
Mini-Circuits
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| LF2805A |
RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
|
Tyco Electronics
|
| KAI-1020-CBA-FD-BA |
IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT
|
KODAK IMAGE SENSOR SOLUTIONS
|
| HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| U2797B-AFSG3 U2797B U2797B-AFS |
1000-MHz Quadrature Modulator 1000 - MHz的正交调制器
|
Atmel, Corp.
TEMIC[TEMIC Semiconductors]
|
| APT10026JFLL_03 APT10026JFLL APT10026JFLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
|
